Shanghai Microsystems successfully prepared graphene nanoparticles in hexagonal boron nitride trenches
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The Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences has made new progress in the controlled preparation of graphene nanoribbons. Wang Haomin, a researcher at the State Key Laboratory of Information Functional Materials, used the template method to achieve controlled growth of graphene nanoribbons in hexagonal boron nitride trenches for the first time in the world, successfully opening the graphene bandgap and verifying its excellent room temperature. The electrical properties provide a possible technical path for the development of graphene digital circuits. The findings were published in the March 9 issue of Nature-Communications (L. Chen, et al, Oriented graphene nanoribbons embedded in hexagonal boron nitride trenches, Nature Communications, 8, 14703, DOI: 10.1038/ncomms14703 (2017) ). The method for preparing graphene nanoribbons proposed in this study has been patented in China and the United States.
The researchers first etched the hexagonal boron nitride single crystal substrate through metal nanoparticles to cut out nano-trenches with single atomic layer thickness, flat edges, and certain controllability along the zigzag direction and width. Chemical vapor deposition processes produce high-quality graphene nanoribbons in trenches up to several microns in length and less than 10 nanometers in width. The experimental results show that the graphene grows in the trench by stepped epitaxy and forms a continuous lattice in-plane heterojunction with the top hexagonal boron nitride. The researchers prepared a field effect transistor based on graphene nanoribbons. The current switching ratio of the sub-5 nm device at room temperature is greater than 104, and the carrier mobility is about 750 cm2/Vs. The electrical transport bandgap extracted from the electrical measurement is prepared. About 0.5eV, it can meet the basic requirements of digital circuit development.
Graphene is a two-dimensional atomic crystal consisting of a single layer of carbon atoms with excellent physical, chemical, and electrical properties. However, the intrinsic graphene material has a band gap of zero, which limits its application in microelectronic devices, especially digital circuits. The preparation of graphene nanoribbons to open band gaps is a very promising method. However, traditional graphene nanoribbon preparation methods have difficulties in width and boundary chiral control, and they also have the disadvantage of requiring transfer. This study demonstrated a transfer-free, width- and boundary-controllable technical circuit on a hexagonal boron nitride single crystal ideal substrate for graphene, providing a further basis for further exploration of graphene logic circuits compatible with CMOS integrated circuits. Important platform.
Boundary controllability is an important prerequisite for the preparation of practical graphene logic devices. This study has initially confirmed that the prepared nanoribbons are pure zigzag boundary structures through a variety of experimental methods. Research is currently underway to obtain direct evidence for atomic-level element resolution. .
The study was supported by the National Science and Technology Department's major project “Wuben Grade Graphene Electronic Materials and Devices†(2011ZX02707). The research partners include Shanghai University of Science and Technology, Huazhong University of Science and Technology, Central South University, Singapore Nanyang Technological University, Fudan University and Shanghai Institute of Technical Physics, Chinese Academy of Sciences.
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