Japanese researchers form quantum dots in InGaN to use all wavelengths of sunlight to open
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The left is the structure of an InGaN multi-level intermediate-band solar cell. Right is an energy band diagram of an InGaN multi-level intermediate-band solar cell
The Japan Institute of Matter and Materials announced on December 6, 2013 that solar light with a wavelength of 450 to 750 nm has been successfully utilized by forming multiple quantum dots (intermediate strips) in the indium gallium nitride (InGaN) solar cell material. InGaN previously used only shorter wavelengths of sunlight, making it difficult to use this range. According to the research institute, because all the wavelengths of sunlight can be converted into electricity, it is expected to significantly increase the conversion efficiency of solar cells.
There are two ways to increase the conversion efficiency of solar cells. One is to improve the quality of materials and the structure of solar cells so as to increase the efficiency of converting solar energy into electrical energy; the other is to expand the wavelength range of sunlight that can be used, not limited to a specific range. Sunlight. In the case of a compound semiconductor type solar cell, the wavelength range of sunlight that can be used depends on the type of element of the semiconductor material used and the unique band gap in the crystal structure, so that there is a drawback that only light of a specific wavelength range can be used.
For this reason, the industry has begun to study, etc. Quantum dot solar cells can use a longer wavelength solar component by embedding a tandem structure and a quantum dot structure in which a plurality of semiconductor materials having different bandgap sizes are laminated. However, the structure adopted in the past is limited by the difference in the lattice shape and the available semiconductor material, and it is difficult to significantly improve the conversion efficiency.
The research group at the Japan Institute of Materials and Materials Research noted that GaN has the same structure as InN, and that the operating wavelength range encompasses all wavelengths of sunlight. The research team believes that if the intermediate band can be formed centered on the InxGa1-xN mixed crystal of In composition, not only the energy equal to the band gap energy but also the longer wavelength light can be used. , which is the main constituent wavelength of the solar spectrum - visible light such as green and yellow to increase conversion efficiency.
At this time, using an organometallic chemical deposition method, an intermediate-band solar cell in which InGaN quantum dots were embedded in quantum wells was fabricated. The measurement of the external quantum of this solar cell revealed that it actually absorbed 450-750 nm wavelength light that InGaN could not use, and converted the light energy into electrical energy. (Reporter: Hiroshi Kenji, Nikkei BP Cleantech Institute)
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