Microelectronics reveals resistive memory failure mechanism
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Recently, the research group Liu Ming of the Institute of Microelectronics of the Chinese Academy of Sciences has made new progress in the research of resistive random access memory (RRAM), revealing the microscopic mechanism of the reset failure phenomenon of the cation-based resistive memory, and improving the reliability of the device by increasing the ion barrier layer. Sex, the main research results were published on Advanced Materials (DOI: 10.1002/adma.201603293) on October 17th, and was selected as the cover article.
Mobile computing and wearable devices provide real-time, seamlessly connected communications that dramatically change how people interact with the outside world. With the widespread adoption of the next-generation mobile Internet that can provide Gbps data transmission speed, it brings enormous challenges to the storage capacity, read/write speed, and power consumption of portable mobile terminals. Resistive memory has the advantages of simple structure, high speed, low power consumption, and easy 3D integration. It is one of the strong competitors for the next generation of high-density non-volatile memory and has received extensive attention from domestic and foreign research institutes and industry. However, there are still some key problems that need to be overcome before large-scale applications can be implemented in resistive memory. In particular, the failure mechanism and reliability of the device must be further studied.
Liu Ming's research group has conducted systematic research work on the microscopic mechanism, performance regulation and integration technology of cation-based resistive memory. Based on the previous work, the research group recently discovered that there is a competition between the SET and RESET processes in the cation-based resistance-change memory, resulting in failure of the reset operation of such devices. Through the TEM and EDS tests, it was found that the active metal forming the conductive filaments will diffuse into the Pt electrode under the action of an electric field, thereby forming an additional active metal source in the Pt electrode, causing a failure of the reset operation. The research group proposed a solution to increase the ion barrier layer on the surface of Pt electrode to suppress the over-growth of conductive filaments into the Pt electrode, and developed a new structure device that inserts single-layer graphene as an ion barrier layer. TEM results show that the graphene intercalation layer can Effectively blocking the over-growth of the conductive filaments into the Pt electrode layer, the electrical experiment results prove that the graphene intercalation device eliminates the phenomenon of reset operation failure, and still has excellent resistive memory performance while improving the reliability of the device.
Doctoral student Liu Sen, associate researcher Lu Nianduan and doctoral student Zhao Xiaolong were the co-first authors of the article, and researchers Liu Qi and Academician Liu Ming of the Chinese Academy of Sciences were the co-corresponding authors of the article. The above work has been funded by related projects of the State Fund Committee, the Chinese Academy of Sciences and the Ministry of Science and Technology.
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