Realization of high efficiency polysilicon light source based on PN junction cascade
The reporter recently learned from the University of Electronic Science and Technology that the research group Xu Kaikai of the school has developed a monolithic integrated all-silicon light-emitting device with the help of standard silicon IC technology to realize a highly efficient polysilicon light source based on PN junction cascade. Making new breakthroughs has laid a solid foundation for the vigorous development of China's integrated circuit industry.
In recent years, the silicon-based optoelectronic integrated circuit (OEIC) has been paid more and more attention, but while ensuring that the manufacturing process of the light source is compatible with the existing integrated circuit process, how to improve the quantum efficiency of the silicon-based light source has always been the focus of research in this field. Scientists have discovered that the unique advantage of compatibility of silicon-based optoelectronic devices with CMOS (Complementary Metal Oxide Semiconductor) processes is making large-scale integration of optoelectronic devices possible.
"Chip-level silicon-based optoelectronic integration technology has the characteristics of small size, low power consumption, high stability, and low cost. It is one of the most promising mainstream technologies in semiconductor optoelectronic devices and integration technologies today." The relevant person in charge of the Semiconductor Optoelectronic Devices and Integration Technology Research Group said that relying on the State Key Laboratory of Electronic Thin Films and Integrated Devices, in cooperation with China Electronics Technology Group Chongqing Sound Optoelectronics Co., Ltd. and other units, tried to completely replace monocrystalline silicon materials by introducing polycrystalline silicon materials The carrier injection engineering and device structure design complement each other's advantages, realizing a relatively efficient polysilicon light source, and its PN junction cascaded device structure also lays the technical foundation for high-frequency modulation. Based on the above research, the research team Zhao Jianming and the classmates of the research team. A carrier injection circuit based on a PN junction structure has also been implemented. This electro-optical circuit based on silicon sensor carrier injection is expected to be used in many sensing devices including lidar and millimeter wave radar in the future. A few days ago, the relevant results have been published by the research team members as the first author on Optical Materials. (Tao Yuxiang reporter Sheng Li)
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